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Model:
TO252MDD4N65DS
Brand:
Description:
N-Channel 650 V 4A -
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TO252MDD4N65DS
📦 Stock: 167,327
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Technical Specifications

Package:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Grade:-
Qualification:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-

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