Model:
NC1M120C35HTNG
Brand:
Description:
N-Channel 18V 75A 386W TO-247-4 Through Hole
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Technical Specifications
Package：Tube
Product Status：Active
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1.2 kV
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：50mOhm @ 33.3A, 18V
Vgs(th) (Max) @ Id：4.5V @ 15mA
Gate Charge (Qg) (Max) @ Vgs：190 nC @ 18 V
Vgs (Max)：+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2834 pF @ 1 kV
FET Feature：-
Power Dissipation (Max)：386W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4