Model:
LSIC1MO120E0160
Brand:
Description:
N-Channel 1200 V 22A 125W TO-247-3 Through Hole
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Technical Specifications
Series：-
Package：Tube
Product Status：Active
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：200mOhm @ 10A, 20V
Vgs(th) (Max) @ Id：4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：57 nC @ 20 V
Vgs (Max)：+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds：870 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AD
Package / Case：TO-247-3