Model:
IXFK200N10P
Brand:
Description:
N-Channel 100 V 200A 830W TO-264-3, TO-264AA Through Hole
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Technical Specifications
Package：Tube
Product Status：Active
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：235 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：830W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-264AA (IXFK)
Package / Case：TO-264-3, TO-264AA