Model:
IXFH80N65X2-4
Brand:
Description:
N-Channel 650 V 80A 890W TO-247-4 Through Hole
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Technical Specifications
Package：Tube
Product Status：Active
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：38mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：140 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：8300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：890W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4