Model:
GC11N65M
Brand:
Description:
N-Channel 650 V 11A 78W TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Surface Mount
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Technical Specifications
Package：Cut Tape (CT)
Product Status：Active
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：768 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：78W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB