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Technical Specifications
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V, 4.5V
Rds On (Max) @ Id, Vgs:10mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):20V
Input Capacitance (Ciss) (Max) @ Vds:4714 pF @ 20 V
FET Feature:-
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Grade:-
Qualification:-
Mounting Type:Surface Mount
Supplier Device Package:-
Package / Case:-
