Model:
G2012
Brand:
Description:
N-Channel 20 V 12A 1.5W 6-WDFN Exposed Pad Surface Mount
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Technical Specifications
Package：Cut Tape (CT)
Product Status：Active
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：12mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：1255 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-DFN (2x2)
Package / Case：6-WDFN Exposed Pad