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Technical Specifications
Series：-
Product Status：Active
Technology：MOSFET (Metal Oxide)
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：40A (Tc), 24A (Tc)
Rds On (Max) @ Id, Vgs：9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：29nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2213pF @ 20V, 2451pF @ 20V
Power - Max：65W (Tc), 50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-DFN (4.9x5.75)