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Technical Specifications
Series：-
Package：Bulk
Product Status：Obsolete
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4.7A (Ta)
Rds On (Max) @ Id, Vgs：42mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1450pF @ 10V
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：-
Supplier Device Package：8-TSSOP